A process used by Trikon to etch a semiconductor comprises a plasma chamber in which radicals and electrons are produced through ionisation in a plasma. These then migrate onto a silicon wafer, leading to etching through chemical action. Power for this process comes from an external radio-frequency source which causes skin heating of the gas inside the chamber. The gas in the device is primarily oxygen, with a flow rate that can be controlled as part of the process. The main questions posed to the Study Group were how the process depends on the gas flow, the RF heating power and the gas pressure.

Problem presented by
Nick Appleyard, Trikon

Study Group contributors
Chris Budd (University of Bath)
Paul Dellar (University of Oxford)
Andrew Lacey (Heriot-Watt University)
John Ockendon (University of Oxford)
Giles Richardson (University of Nottingham)
Meir Shillor (Oakland University, USA)
Jan-Philipp Weiss (Universität Karlsruhe)